Difference between revisions of "Silicon tetrabromide"
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| − | '''Silicon tetrabromide''', SiBr<sub>4</sub>, is a colourless liquid that fumes in moist air. It is produced from the reaction of [[silicon]] with [[bromine]] vapour at 600 °C,<ref name="Kirk-Othmer"/> and is used in the production of high-purity silicon.<ref>{{citation | inventor1-first = | + | '''Silicon tetrabromide''', SiBr<sub>4</sub>, is a colourless liquid that fumes in moist air. It is produced from the reaction of [[silicon]] with [[bromine]] vapour at 600 °C,<ref name="Kirk-Othmer"/> and is used in the production of high-purity silicon.<ref>{{citation | inventor1-first = Yoshinao | inventor1-last = Ihara | inventor2-first = Nobuhiro | inventor2-last = Ogawa | assignee = Tosoh Corp. | title = 高純度シリコンの製造方法 (Production of high-purity silicon) | country-code = JP | patent-number = 63129011 | publication-date = 1988-06-01}}.</ref> |
==Notes and references== | ==Notes and references== | ||
Revision as of 08:42, 8 January 2011
| Silicon tetrabromide | |
|---|---|
| Other names | Tetrabromosilane |
| Identifiers | |
| InChI | InChI=1/Br4Si/c1-5(2,3)4 |
| InChIKey | AIFMYMZGQVTROK-UHFFFAOYAY |
| Standard InChI | InChI=1S/Br4Si/c1-5(2,3)4 |
| Standard InChIKey | AIFMYMZGQVTROK-UHFFFAOYSA-N |
| CAS number | [] |
| EC number | |
| ChemSpider | |
| Properties[1][2] | |
| Chemical formula | SiBr4 |
| Molar mass | 347.70 g mol−1 |
| Appearance | colourless liquid |
| Density | 2.7715 g cm−3 |
| Melting point |
5 °C |
| Boiling point |
153 °C |
| Solubility in water | reacts violently |
| Related compounds | |
| Other anions | Silicon tetrafluoride Silicon tetrachloride Silicon tetraiodide |
| Other cations | Carbon tetrabromide Germanium tetrabromide Tin tetrabromide Lead tetrabromide |
| Other compounds | Bromosilane Dibromosilane Tribromosilane |
| Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) | |
Silicon tetrabromide, SiBr4, is a colourless liquid that fumes in moist air. It is produced from the reaction of silicon with bromine vapour at 600 °C,[1] and is used in the production of high-purity silicon.[3]
Notes and references
Notes
References
- ↑ 1.0 1.1 Ukeles, S. D.; Freiberg, M. Bromine, Inorganic Compounds. In Kirk-Othmer Encyclopedia of Chemical Technology; John Wiley: New York, 2002. DOI: 10.1002/0471238961.021815131001031.
- ↑ CRC Handbook of Chemistry and Physics, 62nd ed.; Weast, Robert C., Ed.; CRC Press: Boca Raton, FL, 1981; p B-143. ISBN 0-8493-0462-8.
- ↑ Ihara, Yoshinao; Ogawa, Nobuhiro (Tosoh Corp.) 高純度シリコンの製造方法 (Production of high-purity silicon). JP Patent 63129011, published 1 June 1988.
External links
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