Difference between revisions of "Tribromosilane"

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|  MeltingPt = −73.5 °C
 
|  MeltingPt = −73.5 °C
 
|  BoilingPt = 112 °C
 
|  BoilingPt = 112 °C
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| Section4 = {{Chembox Thermochemistry
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|  Reference = <ref>{{NIST chemistry | name = Silane, tribromo- | id = 1S/Br3HSi/c1-4(2)3/h4H | accessdate = 2011-01-08}}.</ref>
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|  DeltaHf = −302.92 kJ mol<sup>−1</sup> (gas)
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|  Entropy = 348.04 J K<sup>−1</sup> mol<sup>−1</sup> (gas)
 
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| Section8 = {{Chembox Related

Latest revision as of 09:41, 8 January 2011

Tribromosilane
Identifiers
InChI InChI=1/Br3HSi/c1-4(2)3/h4H
InChIKey IBOKZQNMFSHYNQ-UHFFFAOYAZ
Standard InChI InChI=1S/Br3HSi/c1-4(2)3/h4H
Standard InChIKey IBOKZQNMFSHYNQ-UHFFFAOYSA-N
CAS number [7789-57-3]
EC number 232-175-6
ChemSpider 74222
Properties[1][2]
Chemical formula SiHBr3
Molar mass 347.70 g mol−1
Appearance colourless liquid
Density 2.7 g cm−3
Melting point

−73.5 °C

Boiling point

112 °C

Solubility in water reacts violently
Thermochemistry[3]
Std enthalpy of formation ΔfHo298 −302.92 kJ mol−1 (gas)
Standard molar entropy So298 348.04 J K−1 mol−1 (gas)
Related compounds
Other anions Trifluorosilane
Trichlorosilane
Triiodosilane
Other cations Tribromomethane
Tribromogermane
Other compounds Bromosilane
Dibromosilane
Tetrabromosilane
Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa)

Tribromosilane, SiHBr3, is a colourless liquid that fumes in moist air. It is produced from the reaction of silicon tetrabromide with silicon at 600–800 °C in an atmosphere of hydrogen,[1] and is used in the production of high-purity silicon.[4]

Notes and references

Notes

References

  1. 1.0 1.1 Ukeles, S. D.; Freiberg, M. Bromine, Inorganic Compounds. In Kirk-Othmer Encyclopedia of Chemical Technology; John Wiley: New York, 2002. DOI: 10.1002/0471238961.021815131001031.
  2. CRC Handbook of Chemistry and Physics, 62nd ed.; Weast, Robert C., Ed.; CRC Press: Boca Raton, FL, 1981; p B-142. ISBN 0-8493-0462-8.
  3. Silane, tribromo-. In NIST Chemistry WebBook; National Institute for Standards and Technology, <http://webbook.nist.gov/cgi/inchi/InChI%3D1S/Br3HSi/c1-4(2)3/h4H>. (accessed 8 January 2011).
  4. Ihara, Yoshinao; Ogawa, Nobuhiro (Tosoh Corp.) 高純度シリコンの製造方法 (Production of high-purity silicon). JP Patent 63129011, published 1 June 1988.
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